High index contrast polysiloxane waveguides fabricated by dry etching

نویسندگان

  • S. J. Madden
  • M. Y. Zhang
  • D.-Y. Choi
  • R. Charters
چکیده

The authors demonstrate the production of low loss enhanced index contrast waveguides by reactive ion etching of IPGTM polysiloxane thin films. The use of a silica mask and CHF3 /O2 etch gas led to large etch selectivity between the silica and IPGTM of !20 and etch rates of !100 nm /min. This work indicates that compact optical circuits could be successfully fabricated for telecommunication applications using polysiloxane films. © 2009 American Vacuum Society. #DOI: 10.1116/1.3119670$

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تاریخ انتشار 2009